Aln aluminum nitride ceramic round disc substrate for semiconductor

Aluminum Nitride (AlN) Substrates
When heat must be dissipated quickly and reliably in order to protect the valuable components. This is where XTL Aluminum Nitride Substrate set the benchmark. With outstanding insulating properties and extremely high thermal conductivity.

Aluminum Nitride Substrate Advantages
• Very high thermal conductivity (> 180 W/mK)
• Low thermal expansion 4 to 6×10-6K-1 (between 20 and 1000°C) similar to Si, GaN,
and GaAs semiconductors
• High dielectric strength

In-House Advanced Machining Processes
XTLprovides all the advanced services you need to
shorten lead times and improve component quality.
Processes including:
• Laser machining • Polishing
• Lapping • Laser etching • Metalization capacity

Standard & custom substrate available
Standard squares: 25.4, 50.8, 57.1, 63.5, 76.2, 101.6, 114.3, 121.9 mm
Standard rounds: 100, 150 mm
Thicknesses available: 0.2 – 3.556 mm

Tel: +86 13975373343
E-Mail: sales01@sintyron.com