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Chinese High-Performance Aluminum Nitride Gold-Plated Substrate for Power Lasers and Optical Communication
| Article | Unité | Si3N4 | AlN | ZTA | BeO |
| Densité | g/m³ | 3.2 | 3.3 | 4 | 3 |
| Thermal Conductivity | W/m.K@25℃ | ≥80 | ≥170 | ≥27 | ≥250 |
| Coefficient of Thermal Expansion | X10-6/K（20℃-300℃） | ≤2.6 | ≤4.3 | ≤7.5 | ≤9 |
| Flexural Strength | MPa | ≥700 | ≥450 | ≥500 | ≥190 |
| Dielectric Strength | KV/mm | ≥15 | |||
| Dielectric Loss | 1MHz | 0.0003 | |||
| Dielectric Constant | 1MHz | 9 | 10.5 | 6.9 | |
| Volume Resistivity | Ω·cm@ 20 °C | 10(14) | |||
| Young’s Modulus | Gpa | 320 | 310 | / | |
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