Aluminum nitride (AlN)
Aluminum nitride (AlN) ceramic material was found to be promising in microelectronics applications, due to its very high thermal conductivity and property as an insulating ceramic. Recently, the most common application for aluminum nitride is substrate for electronics or chip carriers. Along with PBN crucibles, AlN is also one of the selected materials to build crucibles for grow crystals of GaN (gallium nitride)
Aluminum nitride crucibles could withstand about 1300°C in air, without bulk oxidation, although the process started after 700°C. In vacuum, AlN decompose at 1800°C. AlN melts at 2200°C, with inert atmosphere protection. In general, the working temperature for AlN products is 800°C in air, 1700°C in vacuum and 2100°C in inert atmosphere.
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